The method of raising the mobility of inversion layer of the silicon carbide metal oxide semiconductor electric field effective type transistor

摘要

The method of raising the inversion layer mobility of the silicon carbide metal oxide semiconductor electric field effective type transistor (MOSFET) is offered. Especially, this invention, forming the oxide film in the silicon carbide baseplate, offers the oxide film of SiCMOSFET and the method of improving the interface of the baseplate. This method includes the process which forms the oxide film under existing of the metal impurity.