A Compact Physical Model for Subthreshold Current in Nanoscale FD/SOI MOSFETs

摘要

This paper presents a compact physical model for current-voltage characteristics of Ultra-Thin Body (UTB) Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFETs in subthreshold region which accounts for Quantum Confinement Effects (QCEs) as well as Short Channel Effects (SCEs). Body region is modeled as an infinite potential well and carrier concentration is calculated accordingly. The model could be used for device and circuit applications such as yield estimation and static power approximation. Accuracy of the model was verified by simulation analysis in which coupled Poisson and Schrodinger equations were solved. Our analytical results show good agreement with simulation.