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ANALYSIS OF INDENTATION DEPTH DEPENDENCE OF ELASTIC PROPERTIES OF INTER-LAYER DIELECTRIC FILMS ON SILICON

机译:硅层间介电膜的弹性性能缩进深度依赖性分析

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Analysis of indentation depth dependence of elastic modulus of soft films on silicon substrate measured by nanoindentation was studied. The experimental results were compared with two existing models that describe the effects of the substrate on elastic modulus of layered solid. Saha-Nix model that is the recent modification of King model agreed well with the experimental results to a certain limit of the indentation depth. It was found that the depth limit which Saha-Nix model is valid depended almost linearly on the relative elastic modulus of the film to the substrate E_(f)/E_(s). We further introduced an additional scaling parameter that is a linear function of E_(f)/E_(s) in Saha-Nix model. The improved model was applied to porous silica low-k films. The model predicted a constant intrinsic elastic modulus of the film up to a depth of 30 percent of the film thickness.
机译:研究了纳米茚流测量的硅衬底上软膜弹性模量的压痕深度依赖性分析。将实验结果与两种现有模型进行比较,该模型描述了基材对层状固体弹性模量的影响。 Saha-Nix模型是最近的国王模型的修改很好地同意实验结果对压痕深度的一定限制。发现Saha-nix模型有效的深度限制几乎线性地依赖于膜的相对弹性模量,以呈基板E_(f)/ e_(s)。我们进一步介绍了一个额外的缩放参数,它是萨哈-NIX模型中的e_(f)/ e_(s)的线性函数。将改进的模型应用于多孔二氧化硅低k薄膜。该模型预测薄膜的恒定内在弹性模量,高度为膜厚度的30%。

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