ORGANOSILANE COMPOUNDS FOR MODIFYING DIELECTRICAL PROPERTIES OF SILICON OXIDE AND SILICON NITRIDE FILMS

摘要

PURPOSE: An organic silane compound for improving dielectric features of silicon dioxide and silicon nitride films containing carbon is provided to enhance the etching resistance of silicon dioxide and silicon nitride films by increasing the amount of carbon mixed. CONSTITUTION: A method for depositing a silicon dioxide or silicon nitride film containing carbon comprises steps of: preparing a structural precursor containing silicon, preparing a dopant precursor containing carbon, mixing the dopant precursor containing carbon with the structural precursor containing silicon to obtain a mixture with a flow rate Fm, preparing a chemical modifier with a flow rate Fc, achieving a flow rate R2 of 25~75%, where R2 is Fm/Fc, and forming a silicon dioxide or silicon nitride film containing carbon with improved etching resistance. The structure precursor containing silicon is selected from the group consisting of bis(tert-butylamino)silane, dichlorosilane, hexachloro-disilane and their mixture.