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Studies on Dielectric Properties of Silicon Nitride at High Temperature

     

摘要

In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li+, K+, Ca2+, Al3+ and Mg2+ doping on the dielectric properties of silicon nitride are also estimated.

著录项

  • 来源
    《电子科技学刊》|2007年第4期|316-319|共4页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China;

    Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing, China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 真空电子技术;
  • 关键词

    Dielectric properties,impurity ion,silicon nitride.;

  • 入库时间 2023-07-26 00:13:12

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