Compact Physical Modeling of Fully-Depleted SOI MOSFET

摘要

A new compact physical model for fully-depleted SOI MOSFET has been proposed. The key feature of this model is analytical solution of current continuity equation and the introduction and derivation in explicit form of the control parameter having a physical sense the ratio of diffusion component of total drain current to its drift current component Compact closed-form expressions for drain current, distributions of chemical and electrostatic potential along the channel for all operation modes have been obtained.