机译:具有独立控制的前栅极和后栅极的全耗尽SOI MOSFET的高效计算紧凑模型
Dept. of Electrical Engineering and Computer Sciences. University of California, Berkeley, CA 94720-1770, USA;
Dept. of Electrical Engineering and Computer Sciences. University of California, Berkeley, CA 94720-1770, USA;
Dept. of Electrical Engineering and Computer Sciences. University of California, Berkeley, CA 94720-1770, USA;
Dept. of Electrical Engineering and Computer Sciences. University of California, Berkeley, CA 94720-1770, USA;
Dept. of Electrical Engineering and Computer Sciences. University of California, Berkeley, CA 94720-1770, USA;
berkeley short channel insulated-gate fet; model (bsim); compact modeling; double-gate mosfet; fully-depleted soi mosfet; computational efficiency;
机译:凹陷的源极/漏极UTB SOI MOSFET的前,后栅极电位分布和阈值电压的分析模型
机译:具有背栅控制的轻掺杂纳米级超薄体和Box SOI MOSFET的分析紧凑模型
机译:BSIM-IMG:具有背栅控制的超薄体SOI MOSFET的紧凑模型
机译:全耗尽SOI MOSFET的紧凑型物理建模
机译:双栅MOSFET量子效应的紧凑模型。
机译:FinFET和带铁电电容器的全耗尽绝缘体上硅(FDSOI)MOSFET的磁滞窗口研究
机译:副通道全耗尽SOI MOSFET的子阈值电流建模与后栅极控制