Monolithically Integrated p- n-Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates

摘要

Inverters made of monolithically integrated p- and n-channel thin film transistors of nanocrystalline silicon were demonstrated on both Corning 1737 glass and Kapton E polyimide substrates. The TFT's geometry is staggered top-gate, bottom-source/drain. A nc-Si:H seed layer promotes the structural evolution of the nc-Si:H channel. Electron field-effect mobilities of 15 - 30 cm{sup}2V{sup}(-1)s{sup}(-1) and hole mobilities of 0.15 - 0.35 cm{sup}2V{sup}(-1)s{sup}(-1) were obtained. Slightly lower carrier mobilities were observed in the TFTs made on polyimide than on glass substrates. High gate leakage currents and offsets between the supply HIGH voltages and the output voltages in the inverters indicate that the low-temperature gate dielectric needs improvement.