High performance n-channel thin-film transistors with an amorphous phase C_(60) film on plastic substrate

摘要

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C_(60) film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO_2). The transistors exhibited high performance with a threshold voltage of 1.13 V, an inverse subthreshold swing of 252 mV/decade, and a field-effect mobility up to 1 cm~2/V s at an operating voltage as low as 5 V. The amorphous phase C_(60) films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.