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2.1-μm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

机译：由Sb表面活性剂辅助的金属机气相外延生长的2.1-μm波长应变indaas多量子孔激光器

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Sb surfactant suppresses three-dimensional growth of highly strained InGaAs wells on InP substrate. The emission wavelength exceeds 2.1 μm for a buried-heterostructure laser with an active region using InGaAs wells.

机译：Sb表面活性剂抑制了在INP底物上高度应变的InGaAs孔的三维生长。对于使用InGaAs孔的掩埋异结构激光器，发射波长超过2.1μm。

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《Pacific Rim Conference on Lasers and ELectro-Optics》|2005年||共2页
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Tomonari Sato; Manabu Mitsuhara; Takao Watanabe; Kazuo Kasaya; Yasuhiro Kondo;
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专利

1. 2.1-μm-Wavelength InGaAs Multiple-Quantum-Well Distributed Feedback Lasers Grown by MOVPE Using Sb Surfactant [J] . Sato T., Mitsuhara K., Watanabe T., IEEE journal of selected topics in quantum electronics . 2007,第期

机译：MOVPE使用锑表面活性剂生长的2.1μm波长InGaAs多量子阱分布式反馈激光器
2. Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1 μm by metalorganic vapor phase epitaxy [J] . Tomonari Sato, Manabu Mitsuhara, Takao Watanabe, Applied Physics Letters . 2005,第21期

机译：表面活性剂介导的金属有机气相外延生长的InGaAs多量子阱激光器以2.1μm发射
3. Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy [J] . Tanbun-Ek T., Logan R.A. IEEE Journal of Quantum Electronics . 1990,第8期

机译：金属有机气相外延生长连续梯度折射率分离禁区异质结构（GRIN-SCH）InGaAs-InP长波长应变层量子阱激光器及其表征
4. 2.1-μm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant [C] . Tomonari Sato, Manabu Mitsuhara, Takao Watanabe, Pacific Rim Conference on Lasers and ELectro-Optics . 2005

机译：由Sb表面活性剂辅助的金属机气相外延生长的2.1-μm波长应变indaas多量子孔激光器
5. Phase Stability and Ferromagnetism in Thin Film InMnSb Multi-Phase Semiconductor Alloys Grown by Metalorganic Vapor Phase Epitaxy [D] . Feeser, Caitlin Elizabeth. 2012

机译：金属有机气相外延生长的薄膜InMnSb多相半导体合金的相稳定性和铁磁性
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy [O] . Carvalho Jr, Wilson de, Bernussi, Ayrton André, Furtado, Mário Tosi, 2015

机译：低压金属有机气相外延生长的应变In1-xGaxAsyP1-y / InP量子阱异质结构
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

2.1-μm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

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