Fabrication and characterization of a field-effect transistor using deep-UV transparent semiconductor Ga_2O_3

摘要

We fabricated a field effect transistor (FET) using a deep-UV transparent oxide semiconductor Ga_2O_3:Sn as an-channel layer. Optical transmittance of the channel layer was larger than 80 percent in the deep-UV region (lambda approx 250 nm). The MISFET was operated in the depression mode with a threshold gate voltage of -6.7 V. The field effect mobility and ON/OFF current ratio were 5 X 10~(-2) cm~2(Vs)~(-1) and approx 10~1, respectively.