DESIGN AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING COMPLEMENTARY CHANNEL-JUNCTION INSULATED-GATE FIELD-EFFECT TRANSISTORS WHOSE GATE ELECTRODES HAVE WORK FUNCTIONS CLOSE TO MID-GAP SEMICONDUCTOR VALUE

摘要

The pair of complementary CJIGFETs 100 and 160 are formed from the main bodies 102 and 104 of the semiconductor material. Each CJIGFET includes a pair of source / drain regions 112 and 114 or 172 and 174 separated by sides disposed along the top surface of the semiconductor body, and (b) channel regions 110 or 170 extending between the source / drain regions. And (c) a gate electrode 118 or 178 overlying the channel region and electrically insulated from the channel region is formed. The gate electrode of each CJIGFET has a Fermi energy level within 0.3 eV in the middle of the energy versus gap of the semiconductor material. One of the transistors conducts current in the field induced channel mode and the other conducts current in the metallurgical channel mode. The magnitude of the threshold voltage for each CJIGFET is typically less than 0.5V.