PULSE TESTING OF GaN/AlGaN HEMTs

机译：pulse testing of Gan/AL Gan he MTS

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Pulsed Ⅰ-Ⅴ testing of GaN/AlGaN HEMTs can be used to fill in the gaps for the known discrepancies between DC Ⅰ-Ⅴ testing and rf performance, In this paper, useful examples from our laboratory of pulsed Ⅰ-Ⅴ testing of GaN/AlGaN HEMTs are presented.

机译：脉冲Ⅰ-ⅴ甘/栎HEMTS的试验可用于填补DCⅠ-β测试和RF性能之间已知的差异的差距，从本文中，我们的脉冲实验室Ⅰ-β的实验室的实验室/ Algan Hemts呈现。

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《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》|2004年||共6页
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5. PULSE TESTING OF GaN/AlGaN HEMTs [C] . A. G. Baca, Y.M. Kim, P.F. Marsh, Proceedings vol.2004-06; Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and State-of-the-Art Program on Compound Semiconductors International Symposia and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(U . 2004

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PULSE TESTING OF GaN/AlGaN HEMTs

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