S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

摘要

Reliability studies are fundamental to optimize the use of new emerging technologies such as AIGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using A1GaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11,000 h total) are performed under different conditions of (V-ds), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented (P-out, I-ds, I-gs, R-ds(on), G(m) and V-th). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.