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Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics

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1.HOMOEPITAXIAL GROWTH OF IRON-DOPED 4H-SIC BY BIS-TRIMETHYLSILYLMETHANE AND FERROCENE PRECURSORS FOR SEMI-INSULATING SIC

机译：通过双三甲基甲硅烷甲烷和二氧化烯前体进行铁掺杂的4H-SiC的同性端生长，用于半绝缘SiC
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
2.ADVANCES IN CHARACTERIZATION OF HI-NITRIDES BY SECONDARY ION MASS SPECTROMETRY

机译：二次离子质谱法表征高氮化物的研究进展
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
3.4H-SiC PLANAR MESFETs WITH F_(max) OF 40 GHz WITHOUT TRAPPING EFFECT

机译：4H-SIC平面MESFET，F_（MAX）为40 GHz而不陷入效果
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
4.High performance GaN HEMTs for mmWave applications

机译：MMWAVE应用的高性能GaN HEMTS
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
5.High output power GaAs-based Vertical External Cavity Surface Emitting Lasers achieved by AuIn_2 Solid Liquid Inter Diffusion Bonding

机译：基于高输出功率GaAs的垂直外腔表面发射通过Auin_2的实体液体间扩散键合实现的激光器
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
6.ULTRA HIGH OUTPUT POWER 365 nm ULTRAVIOLET LIGHT-EMITTING DIODES

机译：超高输出功率365nm紫外线发光二极管
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
7.Au/In_2 BONDING OF InP-BASED MOEMS

机译：AU / IN_2基于INP的MOEMS的键合
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
8.STRUCTURAL AND OPTICAL CHARACTERIZATION OF NON-POLAR A-PLANE GAN THIN FILMS GROWN ON R-PLANE SAPPHIRE VIA HIGH-TEMPERATURE ALN NUCLEATION LAYERS BY METALORGANIC CHEMICAL VAPOR DEPOSITION

机译：通过通过金属化学气相沉积通过高温Aln成核层在R面蓝宝石上生长的非极性A平面GaN薄膜的结构和光学表征
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
9.PULSE TESTING OF GaN/AlGaN HEMTs

机译：pulse testing of Gan/AL Gan he MTS
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
10.High Performance Planar Sub-Micron InP Heterojunction Bipolar Transistor

机译：高性能平面子微米INP异质结双极晶体管
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
11.SINGLE CRYSTAL GROWTH OF GALLIUM NITRIDE BY SLOW-COOLING OF ITS CONGRUENT MELT UNDER HIGH PRESSURE

机译：在高压下通过缓慢冷却氮化镓的单晶生长
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
12.SI-DOPED IN_(0.23)GA_(0.77)N/GAN SHORT-PERIOD SUPERLATTICE TUNNELINGCONTACT LAYER USED ON INGAN/GAN LASER DIODE

机译：Si-掺杂IN_（0.23）GA_（0.77）N / GAN短周期超晶格隧道联系层用于INGAN / GAN激光二极管
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
13.Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics

机译：氮化硅PECVD生长对AlGaN / GaN HEMT分散和击穿特性的影响
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
14.CONTROL OF SURFACE MORPHOLOGY IN PHOTOELECTROCHEMICAL ETCHING OF GaN

机译：GaN的光电化学蚀刻中的表面形态控制
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
15.FABRICATION OF GROUP Ⅲ-NITRIDE WAVEGUIDES BY INDUCTIVELY COUPLED PLASMA ETCHING

机译：电感耦合等离子体蚀刻对Ⅲ-氮化物波导的制备
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
16.SPIN-POLARIZATION OF EXCITONS IN GaN

机译：GaN中激子的旋转极化
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
17.CARRIER TRAPPING AND THERMAL EFFECTS IN GaN-BASED HIGH-ELECTRON MOBILITY TRANSISTORS

机译：GaN的高电子迁移率晶体管中的载体捕获和热效应
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
18.DIRECTION OF EXCITED CARRIERS FROM LOW IN FACETS OF INGAN MICROCRYSTALS OBSERVED IN THE HIGHLY SPATIALLY RESOLVED CATHODOLUMINESCENT IMAGES

机译：在高度空间分辨的阴极发光图像中观察到InGaN微晶的小平面中的兴奋载体的方向
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
19.Planar GaN-based UV Photodetectors formed by Si Implantation

机译：由Si植入形成的平面GaN的UV光电探测器
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
20.AN INNOVATIVE PLANARIZATION TECHNOLOGY FOR ULTRA HIGH FREQUENCY InP/InGaAs HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) MANUFACTURING

机译：超高频Inp / Ingaas异质结双极晶体管（HBT）制造的创新平面化技术
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
21.HIGH BREAKDOWN FIELD ( > 15MV/CM) ON CRYSTALLINE β-Ga_2O_3/GaN METAL OXIDE SEMICONDUCTOR DEVICES

机译：晶体β-GA_2O_3 / GaN金属氧化物半导体器件上的高击穿场（> 15mV / cm）
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
22.EFEECTS OF MESA ETCHING PROCESSES ON GaInP/GaAs TRIPLE BARRIER RESONANT TUNNELING DIODES

机译：MESA蚀刻工艺对GAINP / GaAs三屏障共振隧道二极管的影响
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
23.ENHANCED LIGHT EXTRACTION AND SPONTANEOUS EMISSION FROM TEXTURED GaN TEMPLATES FORMED DURING GROWTH BY THE HVPE METHOD

机译：通过HVPE方法在增长期间形成的纹理GaN模板的光提取和自发排放
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
24.SIMULATION STUDY FOR RF-MBE OF GAN(0001) USING THE FIRST PRINCIPLES CALCULATION AND THE KINETIC MONTE CARLO METHOD

机译：第一种原理计算和动力学蒙特卡罗方法模拟GaN（0001）的仿真研究
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
25.EFFECTIVE NITROGEN DOPING OF ZINC OXIDE

机译：氧化锌的有效氮掺杂
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
26.PREPARATION OF CUBIC SILICON CARBIDE WITH SMOOTH SURFACE ON CARBONIZED POROUS SILICON

机译：碳化多孔硅光滑表面的立方碳化硅制备
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
27.Ⅲ-Ⅴ TERNARY BULK CRYSTAL GROWTH TECHNOLOGY

机译：Ⅲ-ⅴ三元散装晶体生长技术
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
28.GROWTH OF GROUP Ⅲ NITRIDES ON VARIOUS PLANE SUBSTRATES

机译：各种平面基材上Ⅲ组氮化物的生长
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
29.SELF-ASSEMBLED INDIUM NITRIDE NANOCOLUMNS GROWN BY MOLECULAR BEAM EPITAXY

机译：分子束外延生长的自组装铟纳米柱
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
30.SELF ORIENTED GROWTH OF GAN FILMS ON MOLTEN GALLIUM

机译：熔融镓的GaN薄膜自定向生长
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
31.HIGH-VOLTAGE AND HIGH-FREQUENCY OPERATION OF AlGaN/GaN POWER HETEROJUNCTION FET

机译：AlGaN / GaN电源异质结FET的高压和高频操作
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
32.SELF-ORGANIZED InGaN/GaN MULTIPLE QUANTUM WELL NANOCOLUMN LIGHT EMITTING DIODES GROWN ON (111) Si SUBSTRATE

机译：自组织Ingan / GaN多量子阱纳米柱发光二极管在（111）Si衬底上生长
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
33.HIGH VOLTAGE AlGaN/GaN POWER HEMT FOR POWER ELECTRONICS APPLICATIONS

机译：高压AlGaN / GaN电源HEMT用于电力电子应用
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
34.SPECTROMETRIC MONITORING METHOD FOR CONCENTRATION OF HYDROGEN PEROXIDE IN CHEMICAL ETCHING SOLUTION OF GALLIUM ARSENIDE

机译：砷化镓化学蚀刻溶液中过氧化氢浓度的光谱监测方法
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
35.HIGHLY REFLECTIVE AND LOW RESISTANCE INDIUM OXIDE/Ag OHMIC CONTACTS TO P-GaN FOR FLIP-CHIP LIGHT EMITTING DIODES

机译：用于倒装芯片发光二极管的P-GaN的高反射性和低电阻铟氧化物/ AG欧姆触点
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
36.UNIQUE CAPABILITIES OF CHEMICALLY-ASSISTED ION-BEAM ETCHING FOR COMPOUND SEMICONDUCTOR DEVICES

机译：化合物半导体器件的化学辅助离子束蚀刻的独特能力
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
37.RARE EARTH-DOPED Ⅲ-N LIGHT EMITTING DIODES

机译：稀土掺杂Ⅲ-n发光二极管
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
38.STUDY OF LONG TIME-SCALE PHOTOLUMINESCENCE DYNAMICS OF GAN/INGAN QUANTUM WELLS AND COMPARISON WITH SAMPLES GROWN ON ELOG-GAN

机译：GaN / IngaN量子孔的长时间光致发光动力学研究及与elog-GaN种植的样品比较
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
39.Fabrication of Indium-doped n-Fe_2O_3 Thin Films by Spray Pyrolytic Deposition Method for Photoelectrochemical Water Splitting

机译：用喷雾热解沉积法制造铟掺杂的N-Fe_2O_3薄膜光解沉积方法，用于光电子化学水分裂
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
40.STUDIES OF ELECTRON TRAPPING IN Ⅲ-NITRIDES

机译：Ⅲ-氮化物电子捕获的研究
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
41.MgZnO/ZnO HETEROSTRUCTURES FOR UV LIGHT EMITTERS AND SPINTRONIC APPLICATIONS: MATERIAL GROWTH AND DEVICE DESIGN

机译：用于UV光发射器和纺锤形应用的MgzNo / ZnO异质结构：材料生长和装置设计
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
42.Effects of Nano-sized Interface on the Electrical Resistances of the P-GaAs Wafer Bonding

机译：纳米大小界面对P-GaAs晶片键合电阻的影响
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
43.CHARACTERIZATION OF GAN SCHOTTKY BARRIER PHOTODIODES WITH A LOW-TEMPERATURE GAN CAP LAYER

机译：用低温GaN帽层的GaN肖特基屏障光电二极管的表征
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
44.GROWTH, CHARACTERIZATION, AND APPLICATION OF HIGH POWER Ⅲ-NITRIDE ULTRAVIOLET EMITTERS

机译：高功率Ⅲ-氮化物紫外线发射器的生长，表征和应用
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
45.RECENT DEVELOPMENT OF NITIRDE HETEROJUNCTION BIPOLAR TRANSISTORS

机译：Nitirde异质结双极晶体管的最新发展
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
46.PLASMA-ASSISTED MBE GROWTH OF GaN ON GaN/SAPPHIRE TEMPLATES GROWN IN SITU BY AMMONIA- MBE

机译：糖尿病对甘/罂郡模板的等离子体辅助MBE生长原位通过氨而生长
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
47.WAFER LEVEL AND CHIP SIZE DIRECT WAFER BONDING AT ROOM TEMPERATURE

机译：晶片水平和芯片尺寸在室温下直接晶片键合
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
48.ADVANCED GaAs HEMT TECHNOLOGIES FOR ULTRA LOW-NOISE AND MILLIMETER-WAVE POWER APPLICATIONS

机译：高级Gaas HEMT技术，用于超低噪声和毫米波电源应用
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
49.CHARGE AND SPIN-BASED ELECTRONICS USING ZNO THIN FILMS

机译：使用ZnO薄膜充电和旋转基电子器件
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
50.Efficient photoelectrochemical Production of Hydrogen from Water by a Carbon Modified n-TiO_2 Thin Film Electrode

机译：通过碳改性的N-TiO_2薄膜电极从水中高效的光电化学生产氢气
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
51.NUMERICAL SIMULATION OF THE ANODIC FORMATION OF NANOPOROUS INDIUM PHOSPHIDE

机译：纳米多孔磷化铟阳极形成的数值模拟
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
52.PHOTOLUMINESCENCE AND TIME-RESOLVED LUMINESCENCE OF QUATERNARY InAlGaN ALLOYES

机译：季度少数汞合金的光致发光和时间分辨发光
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
53.RECENT PROGRESS ON InP HBT TECHNOLOGY AND APPLICATIONS

机译：INP HBT技术与应用的最新进展
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
54.PHOTOELECTROCHEMICAL INVESTIGATION OF THE ETCHING OF GAN IN H_3PO_4

机译：H_3PO_4在GaN蚀刻的光电化学研究
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
55.ENHANCHEMENT OF IONTZATION EFFICIENCY OF ACCEPTORS BY THEIR EXCITED STATES IN HEAVILY DOPED P-TYPE GaN AND WIDE BANDGAP SEMICONDUCTORS

机译：其激发态在重掺杂P型GaN和宽带隙半导体中的激发态提高了受体的电离效率
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
56.ANOMALOUS HALL EFFECT IN WIDE BANDGAP DILUTED MAGNETIC SEMICONDUCTORS CO-DOPED WITH NON-MAGNETIC IMPURITIES

机译：在宽带隙稀释磁半导体中的异常霍尔效应与非磁性杂质共掺杂
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
57.TEM CHARACTERIZATION OF MBE-GROWN CORE/SHELL (Zn,Mg)O NANOWIRES

机译：MBE-生长芯/壳（Zn，Mg）O纳米线的TEM表征
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
58.MOLECULAR BEAM EPITAXY OF GAN ON LATTICE-MATCHED ZIRCONIUM DIBORIDE SUBSTRATES USING LOW-TEMPERATURE GAN AND ALN NUCLEATION LAYERS

机译：使用低温GaN和AlN成核层对晶格匹配锆二硼化物基材的GaN的分子束外延
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
59.Characterization of InGaAs self-mixing detectors for chirp, amplitude-modulated LADAR (CAML)

机译：啁啾，振幅调制LDAR（CAML）的InGaAs自混合探测器的表征
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
60.LOW-DISLOCATION-DENSITY GaN AND AlGaN USING EPITAXIAL-LATERAL-OVERGROWTH METHODS

机译：使用外延 - 横向过度生长方法的低位脱位密度GaN和AlGaN
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
61.SENSORS BASED ON SiC-AlN MEMS

机译：基于SiC-ALN MEMS的传感器
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
62.ELECTRICAL PROPERTIES OF InN GROWN BY MOLECULAR BEAM EPITAXY

机译：分子束外延所生长的INN电气特性
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
63.Insulated gate and surface passivation structures for GaN-based FETs

机译：用于GaN基FET的绝缘栅极和表面钝化结构
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
64.FORMATION OF NANOPOROUS INP BY ELECTROCHEMICAL ANODIZATION

机译：电化学阳极氧化形成纳米多孔INP
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
65.MATERIAL, PROCESS, AND DEVICE DEVELOPMENT OF GaN-BASED HFETs ON SILICON SUBSTRATES

机译：硅基板上GaN的HFET的材料，过程和装置开发
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年
66.BIEXCITONS IN GaN AND AlGaN EPITAXIAL LAYERS

机译：GaN和Algan外延层的Biexcitons
- 会议名称：《Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics》 | 2004年