The mobility vs. carrier density trend in wafer-scale epitaxial graphene on SiC, and how it can be defeated

摘要

Graphene’s unique and exceptional properties make it attractive for technological applications in many areas, including high-speed electronics. The establishment of processes for producing high quality, largescale graphene is necessary for such applications to be enabled.1 Large area growth of graphene on the Siterminated face of hexagonal SiC wafers exhibits manageable growth kinetics – contrary to the C-face – allowing good control over the number of graphene layers. Most importantly, the azimuthal orientation of epi-graphene on the Si-face of a SiC wafer is fixed. Therefore, it is a viable method for producing graphene with uniform coverage and structural coherence at wafer-scale.