Nanocrystals by Bon Beam Synthesis - From Fundamentals to Application in Non-Volatile Memories

摘要

Ion beams are a powerful tool in widely varying fields of modern technology and industrial application. A prominent example is the doping of semiconductors ion implantation. Ion beams also exhibit a great potential for the synthesis of new materials. One of the main goals of materials research using ion beams is to synthesize nanostructures, for example semiconducting or metallic nanocrystals (NCs) in insulating films. As the ion beam synthesis (IBS) of NCs is compatible with CMOS technology, a great effort is currently devoted to the application of IBS to NCs for micro- and optoelectronics. The present contribution addresses the fundamentals governing the IBS of NCs in extremely thin SiO{sub}2 layers, with special emphasis on well-controlled size and position tailoring. The results of the fundamental investigations form the base of technology transfer to the production of novel non-volatile memories. In the framework of national and international R&D projects and in strong collaboration with local microelectronics industries, the viability of a new technology route to memory device fabrication has been demonstrated.