The method of synthesis of SNTO and LTO precursor solutions for making thin films for non-volatile memory device applications

摘要

PURPOSE: A method of mixing a stock solution for manufacturing a ferroelectric film of SNTO and LTO(La2Ti2O7) for non-volatile memory device is provided to improve defects of an existing FRAM by mixing SNTO and LTO and perform an optical modulation function by using a non-linear characteristic of SNTO and LTO. CONSTITUTION: Sr-acetate£Sr(OOCCH3)2|, Nb-ethoxide£Nb(OC2H5)5|, and Ta-ethoxide£Ta(OC2H5)5| are used as stocks of Sr, Nb, and Ta. Acetic acid is used as a solvent for melting the Sr-acetate. Acetyl-acetone(AcAc)(CH3COCH2COCH3) of beta-diketone series is used for controlling a hydrolysis reaction of Nb-ethoxide and Ta-ethoxide. A composition of stock solution of Sr2(Nb1-xTax)2O7 is 0.2 = x =0.8.