Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs

摘要

The gate and drain low-frequency noise (LFN) characteristics of 0.15×200 μm{sup}2 AlGaN/GaN HEMTs are reported. The measured gate noise current spectral density is low and insensitive to the applied high reverse bias voltage between the gate and the drain. Typical gate noise level values vary from ～1.9×10{sup}(-19) to ～3.4×10{sup}(-19( (A{sup}2/Hz) as the drain voltage increases from 1 V to 12 V (V{sub}G = -5v) at 10 Hz. The calculated Hooge parameter is ～5.9×10{sup}(-4), which is comparable to traditional III-V FETs. Lorentz noise components were observed when V{sub}(DS) is higher than 8 V. The peak of Lorentz component moves toward higher frequency when V{sub}(DS) increases and V{sub}(GS) decreases. The exponent γ of the 1/f{sup}γ was found to reduce from 1.17 to 1.01 when V{sub}(DS) increases from 8 V to 16 V. The observed trends are discussed in terms of electric field, carrier velocity and trapping-detrapping considerations.