Ultra-low Temperature Deposition of Copper Seed Layers by PEALD

摘要

Two novel fluorine-free precursors have been developed and evaluated for use in ultra-low temperature copper deposition by PEALD. Manufacturable PEALD processes have been demonstrated, and processing conditions correlated to film composition, growth rate, resistivity and step coverage. Preliminary integration results indicate that both of these precursors have potential for use in advanced interconnect systems.