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机译:氮化铜膜的原子层沉积及其在电沉积铜籽晶层中的应用
INAME, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea;
INAME, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea;
INAME, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea;
School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 151-744, Republic of Korea;
INAME, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea;
School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 151-744, Republic of Korea;
INAME, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea;
Atomic layer deposition; Copper nitride; Copper seed; Electrodeposition; Bis(1-dimethylamino-2-methyl-2-butoxy); copper; NH_3; Reducing anneal;
机译:钌(Ru)薄膜的原子层沉积,使用乙基苯环-环己二烯Ru(0)作为铜金属化的种子层
机译:通过自组装单层工艺在铜籽晶层上进行铜电沉积来填充60 nm沟槽图案
机译:适用于超大规模集成互连的用于铜电沉积的各种铜籽晶层的研究
机译:等离子增强原子层沉积在室温下沉积铜种子层
机译:用于直接板衬和铜扩散阻挡层应用的钌-氮化钛混合相层的等离子体增强原子层沉积。
机译:等离子增强原子层沉积法生长的电力电子应用氮化铝过渡层
机译:原子层沉积生长的氧化铜和铜薄膜,用于微电子器件的金属化系统