A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of silicon substrates capable of producing nanowires and microstructures. The deep vertical etching process consists of sequential oxygen-passivation and SF{sub}6-etching of silicon at a record low density plasma of 0.25-0.5W/cm{sup}2 (150-300W over an area of 20×30cm{sup}2). A concurrent hydrogenation has been used to stimulate the vertical removal of the silicon substrate without damaging the sidewalls [1].
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