Manufacturing a micro-system by deep reactive-ion etching, comprises e.g.: providing an etching tool for deep reactive-ion etching, carrying out multiple repeating-processing intervals of the deep ion etching including an etching step

摘要

Manufacturing a micro-system (1) by deep reactive-ion etching, comprises e.g.: providing an etching tool for deep reactive-ion etching, which includes a gas supply unit for supplying a process gas into an etching chamber of the etching system and a vacuum generating unit for discharging gas from the etching chamber; providing a workpiece blank into the etching chamber, where the workpiece blank includes a structuring layer (2) and a support layer (6), which lie against one another, where the material of the structuring layer has a higher etching rate than the material of the support layer. Manufacturing a micro-system (1) by deep reactive-ion etching, comprises: providing an etching tool for deep reactive-ion etching, which includes a gas supply unit for supplying a process gas, preferably a carrier gas and a reactive gas into an etching chamber of the etching system and a vacuum generating unit for discharging gas from the etching chamber; providing a workpiece blank into the etching chamber, where the workpiece blank includes a structuring layer (2) and a support layer (6), which lie against one another, where the material of the structuring layer has a higher etching rate than the material of the support layer such that the a selectivity constituted of a ratio of the etching rate of the material of the support layer and the etching rate of the material of structuring layer is smaller than other one; carrying out multiple repeating-processing intervals (16) of the deep ion etching, which respectively includes an etching step (18) including removing the material of the structuring layer at a predetermined position from the side of the structuring layer by etching, which faces away from the support layer for the support layer forming a cavity in the structuring layer, where the etching system is operated such that a constant mass flow of process gas is guided into the etching chamber across processing intervals using the gas supply device, and the vacuum generating system is operated at a controlled-pressure; determining the time curve of the process pressure level values that exist in the etching chamber during the etching steps; detecting the etching stop time when the curve flattens back into a predetermined level, after the process pressure level values are increased in the etching chamber; and stopping the repeating processing intervals as soon as the etching stop time is detected.