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Advanced deep reactive-ion etching technology for hollow microneedles for transdermal blood sampling and drug delivery

机译:先进的深反应离子刻蚀技术,用于空心微针,用于经皮血液采样和药物输送

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摘要

Using an SPTS Technologies Ltd. Pegasus deep reactive-ion etching (DRIE) system, an advanced two-step etching process has been developed for hollow microneedles in applications of transdermal blood sampling and drug delivery. Because of the different etching requirements of both narrow deep hollow and large open cavity, hollow etch and cavity etch steps have been achieved separately. This novel two-step etching process is assisted with a bi-layer etching mask. Results show that the etch rate of silicon during this hollow etch step was about 7.5 μm/min and the etch rate of silicon during this cavity etch step was about 8-10 μm/min, using the coil plasma etching power between 2.0 and 2.8 kW. Especially for the microneedle bores etch, the deeper it etched, the slower the etch rate was. The microneedle bores have successfully been obtained 75-150 μm in inner diametre and 700-1000 μm long with high aspect ratio DRIE, meanwhile, the vertical sidewall structures have been achieved with the high etch load exposed area over 70% for the cavity etch step.
机译:使用SPTS Technologies Ltd.的Pegasus深反应离子蚀刻(DRIE)系统,已开发出一种先进的两步蚀刻工艺,用于中空微针在透皮血液采样和药物输送中的应用。由于狭窄的深空心和大开口腔的蚀刻要求不同,因此分别实现了中空蚀刻和腔蚀刻步骤。这种新颖的两步刻蚀工艺辅以双层刻蚀掩模。结果表明,使用2.0至2.8 kW的线圈等离子体蚀刻功率,在​​该中空蚀刻步骤中硅的蚀刻速率约为7.5μm/ min,在该空腔蚀刻步骤中硅的蚀刻速率约为8-10μm/ min。 。特别是对于微针孔蚀刻,其蚀刻越深,蚀刻速率越慢。通过高深宽比DRIE,成功获得了内径为75-150μm,长为700-1000μm的微针孔,同时,在腔体蚀刻步骤中,垂直侧壁结构的蚀刻负荷暴露面积超过70% 。

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