Atomic Layer Chemical Vapour Deposition of ZrO_2 Thin Films: Study of Growth Kinetics and Dielectric Behavior

摘要

One of the problems with scaling MOSFETs beyond the 0.1 mum technology is the increasing leakage current through the gate dielectric.The technology roadmap for semiconductors indicates that the present rate of device scaling will produce 0.1 mum generation devices using an equivalent gate oxide thickness of 1.5-2 nm.