CHEMICAL FOR ATOMIC LAYER DEPOSITION METHOD, AND ATOMIC LAYER THIN FILM DEPOSITION METHOD

摘要

PPROBLEM TO BE SOLVED: To provide a precursor containing no chlorine for CVD or ALD of metal silicate or oxide. PSOLUTION: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy) silanol react with vapors of tetrakis (ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300°C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis (ethyldimethylsilyl) amide to deposit lithium phosphate films on substrates heated to 250°C. Supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage. PCOPYRIGHT: (C)2009,JPO&INPIT