Band edge silicon electroluminescence in amorphous-crystalline silicon heterostructures

摘要

Band edge silicon electroluminescence (EL) was observed at room temperature for an amorphous-crystalline silicon heterostructure which is normally used as a high efficiency solar cell.The EL intensity rises with the temperature from liquid nitrogen to room temperature.The dependence of the intrinsic EL of silicon on current is superlinear both for liquid nitrogen and room temperature.