A study on the behavior of water absorption of SiOF thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition method

摘要

Fluorinated silicon oxide (SiOF) films were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECRPECVD).The behavior of residual stress was studied with water absorption.SiOF film showed compressive stress after deposition.The compressive stress increased after the exposure to room air.Fourier transformed infrared (FTIR) spectroscopy analysis was carried after the water absorption.