Optical Properties of LPCVD silicon oxynitride

摘要

Low pressure chemical vapour deposition (LPCVD) silicon oxynitride films of various compositions (from pure SiO_2 to pure Si_3N_4) were deposited by changing the relative gas flow ratio. The effects of oxygen on the physical properties of the films were studied by spectro-ellipsometry (suing Bruggeman approximation and Wemple Di Domenico model) and infrared spectroscopy. Refractive index measured by spectroellipsometry method is studied as a function of some deposition parameters: temperature of deposition, gases fluxes ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical band gap varies monotonically from 5 eV for silicon nitride, to 9eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be between 5 and 6 eV.