LPCVD APPARATUS AND METHOD FOR FABRICATING POLY SILICON ON WAFER USING THE LPCVD

摘要

The present invention relates to a semiconductor device during manufacture of polysilicon (Poly silicon) deposition method . That is , in the present invention, in the method using a LPCVD polysilicon deposition apparatus , into the process before the process gas inlet tube to introduce a gas such as an inert gas, N ₂ or He, the process for polysilicon deposition the silicon source gas SiH ₄ and doping gas PH ₃ tube -to- wafer processing to prevent particle reactions in the gas phase reaction source inside or polysilicon wafer substrate is relatively by preventing the generation large grain size as is possible to inhibit the generation of particles .