LPCVD APPARATUS AND METHOD FOR FABRICATING POLY SILICON ON WAFER USING THE LPCVD

摘要

In the polysilicon deposition process of using LPCVD in the semiconductor device fabrication, the LPCVD apparatus and the poly silicone deposition method for suppressing the particle generation with the reactive inhibitor are provided. As the method for preventing the particle generation in the LPCVD apparatus in the polysilicon deposition, a step for flowing the inert gas to the process tube(200) to wafer(204) phase particle inhibitor; a step for inflowing the silicon source gas for the polysilicon deposition in the state where the inert gas is flowed in within the process tube; a step for creating polysilicon it inflows the doping gas within the process tube in which the silicon source gas is inflowed; and a step for forming the polysilicon layer of the thickness suppressing and is uniform with on wafer the aberrant growth of the grain size of polysilicon by the inert gas are performed.