首页> 外文会议>IEEE International Interconnect Technology Conference >Study on adhesion properties of low dielectric constant films by stud pull test and modified edge lift-off test
【24h】

Study on adhesion properties of low dielectric constant films by stud pull test and modified edge lift-off test

机译:低介电常数膜通过螺柱拉动试验和改进边缘剥离试验研究了低介电常数膜的粘附性能

获取原文

摘要

Adhesion of low-k films to hardmask or underlayer were studied using stud pull test and modified edge lift off test (m-ELT). The adhesion of SiLK to hardmask was enhanced by depositing thin silicon rich oxide layer under conventional PECVD oxide hard mask. The enhancement of adhesion by the Si-rich oxide layer could be attributed to the increase of dangling bonds on the hardmask surface. Adhesion of SiLK to oxide underlayer was degraded by post-anneal at 430°C and the above and 5-cycle annealing at 400°C. The good correlation between stud pull test and m-ELT was shown in both SiLK and low-k CVD films.
机译:使用螺柱拉动试验和改进的边缘升降机(M-ELT)研究了低k薄膜对硬掩模或底层的粘附性。通过在常规PECVD氧化物硬掩模下沉积薄的硅富氧化物层来增强丝与硬掩模的粘附性。富含Si的氧化物层的粘合性的增强可归因于硬掩模表面上悬空粘合的增加。通过在430℃下的退火后和400℃下的退火后退化,丝绸向氧化物底层的粘附性降解。螺柱拉动试验与M-ELT之间的良好相关性显示在丝和低k CVD薄膜中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号