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METHOD OF FABRICATING LOW-DIELECTRIC CONSTANT INTERLEVEL DIELECTRIC FILMS FOR BEOL INTERCONNECTS WITH ENHANCED ADHESION AND LOW-DEFECT DENSITY
METHOD OF FABRICATING LOW-DIELECTRIC CONSTANT INTERLEVEL DIELECTRIC FILMS FOR BEOL INTERCONNECTS WITH ENHANCED ADHESION AND LOW-DEFECT DENSITY
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机译:具有高附着力和低缺陷密度的Beol互连的低介电常数层间介电薄膜的制造方法
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摘要
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90°C or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.
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