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Blue photoluminescence emission from thermal SiO/sub 2/ films implanted with carbon

机译:来自植入碳的热SiO / sub 2 /薄膜的蓝色光致发光发射

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The structures formed after the implantation of carbon in thermal SiO/sub 2/ and annealing present visible photoluminescence (PL) bands at room temperature. The peak wavelength and intensity of PL bands depend strongly on the temperature of annealing. In contrast, only very weak PL bands are observed after the implantation of argon in thermal SiO/sub 2/ and similar annealing. IR, Raman, SIMS and HRTEM were also used to characterize the microstructure of the carbon or argon implanted thermal SiO/sub 2/ films. These observations show that carbon aggregates are probably the origin of blue PL bands.
机译:在热SiO / sub 2中植入碳后形成的结构/和退火在室温下存在可见光光致发光(PL)带。 PL带的峰值波长和强度强烈地取决于退火的温度。相反,在热SiO / sub 2 /和类似的退火中植入氩气之后仅观察到非常弱的PL带。 IR,拉曼,SIMS和HRTEM也用于表征碳或氩气的微观结构,植入的热SIO / SUB 2 /薄膜。这些观察结果表明,碳聚集体可能是蓝色PL带的起源。

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