Effects of irradiation and proton implantation on the density of mobile protons in SiO(sub 2) films

摘要

Proton implantation into the buried oxide of Si/SiO(sub 2)/Si structures does not introduce mobile protons. The cross section for capture of radiation- induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO(sub 2). This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices.