Ultra-shallow 28-88 nm n/sup +//p junction formation using PH/sub 3/ and AsH/sub 3/ plasma immersion ion implantation

摘要

Ultra-shallow 28-88 nm n/sup +//p junctions formed by PH/sub 3/ and AsH/sub 3/ plasma immersion ion implantation (PIII) have been studied. Diodes with 4.2 nA/cm/sup 2/ total junction reverse leakage current density and 2.4 nA/cm/sup 2/ intrinsic junction bulk leakage current density have been obtained. It is found that the junction depths, sheet resistance and junction reverse leakage current depend on implantation carrier gases, implantation energy and annealing conditions.