Complementary junction-narrowing implants for formation of ultra-shallow junctions

摘要

The invention discloses a kind of methods for forming ultra-shallow junctions, use multiple ion injection step on a semiconductor substrate. Ion implanting step includes being implanted at least two substances of at least one electronically active dopant such as boron (320) and injection, such as fluorine (310) and antimony (300), broadening junction, which is effectively limited, by guidance injects and/or pass through thermal diffusion in dopant. Dopant activation with doping implantation, electrical activation passes through heat treatment (330).