Complementary junction-narrowing implants for formation of ultra-shallow junctions

摘要

Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant such as boron (320) as well as the implantation of at least two species, such as fluorine (310) and antimony (300), effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing (330).