等离子体浸没离子注入介质材料鞘层演化规律

摘要

Plasma immersion ion implantation (Plasma-immersion-ion-implantation, referred to as PIII) has been widely used in metal, semiconductor and insulating materials. Through the field of modified one-dimensional hydrodynamic model, using C programming language, the one-dimensional planar dielectric sheath characteristics are investigated by numerical simulation, obtained the evolution law of the sheath, simulation the results can provide a reference for the optimization of process parameters in practice.%等离子体浸没离子注入(Plasma-immersion-ion-implantation,简称PIII)已被广泛应用于金属、半导体以及绝缘介质材料改性等领域.通过一维流体力学模型,利用C语言实现编程,对一维平面介质靶鞘层特性进行了数值模拟,得到了鞘层的演化规律,模拟的结果可以为优化实际的工艺参数提供参考.