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A WAFER-LEVEL VACUUM PACKAGING PROCESS BY RTPALUMINUM-TO-NITRIDE BONDING

机译:通过Rtpaluminum-氮化物键合的晶片级真空包装工艺

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This paper presents a wafer-level MEMS vacuum packagingprocess by using RTP (Rapid Thermal Processing)aluminum-to-nitride bonding. The measured quality factorof a vacuum-packaged comb-resonator is 1800±200 correspondingto a 200mTorr vacuum inside the packaged microcavity. Both long-term and accelerated vacuum stabilitytests are conducted to characterize the durability ofthe packages. It is found that the vacuum quality hasnot degraded over a period of 9 weeks under regular environmentand over a period of 24 hours under a harshenvironment(130oC, 2.7atm and 100% RH) in the autoclavetest. In an e?ort to address the issue of post-packaging frequencytuning, a pulsed laser deposition method is developedby using either indium or aluminum as the depositionmaterial for frequency tuning. A maximum of 18.1% reductionin frequency has been achieved and a ?rst-order,linear model is found adequate to explain the frequencytuning results.
机译:本文通过使用RTP(快速热处理)铝 - 氮化物键合来呈现晶片级MEMS真空包装过程。真空封装的梳状谐振器的测量质量因子为1800±200,对应于包装微腔内的200mtorr真空。进行长期和加速的真空稳定性稳定性,以表征包装的耐久性。结果发现,在常规环境中,在常规环境下在核环境(130oC,2.7ATM和100%RH)下,在常规环境下在9小时内降解了9周的时间。在E?ORT以解决后封装后频率的问题中,使用铟或铝作为次频调谐的沉积材料,使脉冲激光沉积方法显着。已经实现了最多18.1%的REANGENT频率,并且发现了一个α级线性模型以获得足够的线性模型来解释频率训练结果。

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