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Wafer-level packaging methods using a photolithographic bonding material

机译:使用光刻键合材料的晶圆级封装方法

摘要

A wafer-level packaging method includes providing a base substrate and providing first chips. A photolithographic bonding layer is formed on the base substrate or on the first chips. First vias are formed in the photolithographic bonding layer. The first chips are pre-bonded to the base substrate through a photolithographic bonding layer with each first chip corresponding to a first via. A thermal compression bonding process is used to bond the first chips to the base substrate such that an encapsulation material fills between adjacent first chips and covers the first chips and the base substrate. The base substrate is etched to form second vias through the base substrate with each second via connected to a first via to form a first conductive via. A first conductive plug is formed in the first conductive via to electrically connect to a corresponding first chip.
机译:晶片级封装方法包括提供基础衬底和提供第一芯片。光刻结合层形成在基础基板上或第一芯片上。在光刻结合层中形成第一通孔。通过光刻结合层将第一芯片预结合到基础基板,每个第一芯片对应于第一通孔。使用热压键合工艺将第一芯片键合到基础基板,使得封装材料填充在相邻的第一芯片之间并覆盖第一芯片和基础基板。蚀刻基础衬底以形成穿过基础衬底的第二通孔,每个第二通孔连接到第一通孔以形成第一导电通孔。第一导电塞形成在第一导电通孔中以电连接到对应的第一芯片。

著录项

  • 公开/公告号US10755979B2

    专利类型

  • 公开/公告日2020-08-25

    原文格式PDF

  • 申请/专利权人 NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION;

    申请/专利号US201816236564

  • 发明设计人 HU SHI;MENGBIN LIU;

    申请日2018-12-30

  • 分类号H01L21/768;H01L25;H01L23;H01L21/56;H01L23/31;

  • 国家 US

  • 入库时间 2022-08-21 11:30:19

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