Secondary electron emissive thin film fabricated by atomic layer deposition

摘要

The secondary electron emissive alumina thin film was fabricated by atomic layer deposition (ALD).The film thickness,structure and composition were characterized by Spectroscopic Ellipsometry (SE),X-ray Diffraction (XRD) and X-ray photoelectron spectroscopy (XPS),respectively.The secondary electron yield (σ) of the sample was measured by pulsed electron beam method and the influences of primary electron energy and primary electron angle on the σ have been investigated.