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High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays.

机译:用于下一代显示器的原子层沉积制备的高性能和高可靠性ZnO薄膜晶体管。

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摘要

In this study, ZnO thin-film transistors (TFTs) were fabricated using channel layers deposited by plasma assisted ALD (PA-ALD) at low temperature. During the research high-performance ZnO TFTs were obtained by reducing residual carrier concentrations.

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