首页> 外文会议>Surface Preparation and Cleaning Conference >TiN Hardmask Wet Etching and Post Etch Residue Removal in BEoL for advanced Technology nodes:Effects of material deposition and etch compositions(PPT)
【24h】

TiN Hardmask Wet Etching and Post Etch Residue Removal in BEoL for advanced Technology nodes:Effects of material deposition and etch compositions(PPT)

机译:锡硬掩模湿蚀刻和蚀刻残留物在BEOL中去除先进技术节点:材料沉积和蚀刻组成的影响(PPT)

获取原文

摘要

In the semiconductor industry,titanium nitride is often used as an inorganic hard mask,enabling the robust creation of structures(vias and trenches)with widths down to at least 5nm.After the vias and trenches are created,using plasma etching techniques,the hard mask has to be vemoved again by a wet chemical process,as its presence during final manufacturing steps would severely impact device performance or would increase process complexity in the subsequent process steps.
机译:在半导体工业中,氮化钛通常用作无机硬掩模,使得结构(通孔和沟槽)的宽度设定为宽度至至少5nm。使用等离子体蚀刻技术,难以使用等离子体蚀刻技术来制造通孔和沟槽。面膜必须通过湿化学过程再次被捕获,因为它在最终制造步骤期间的存在会严重影响装置性能或将增加随后的过程步骤中的过程复杂性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号