TiN metal hardmask etch residue removal on advanced porous low-k and Cu device with corner rounding scheme

摘要

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 ?/min at room temperature and more than 100 ?/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to IN SITU controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH _4OH or TMAH and so are very user-friendly.