Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

摘要

In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.