Reliability evaluation and failure analysis of AlGaN/GaN high electron mobility transistor by photo emission microscope

摘要

In this paper, the reliability in AlGaN/GaN HEMTs has been assessed by analyzing the spatial intensity distribution of electroluminescence (EL) detected by Photo Emission Microscope (PEM) during the OFF-state step-stress experiment. And it is found that a relationship between breakdown point and hot spots was confirmed. In addition, we report on the different of EL image before and after failure. Hence, the PEM may as a method to analyze the devices which fail after suffering momentary high voltage.