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Preparation of Sm-Co Epitaxial Thin Films on Cr(100) Single-Crystal Underlayers by Molecular Beam Epitaxy

机译:分子束外延的Cr(100)单晶底层SM-CO外延薄膜的制备

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Sm-Co thin films are prepared on Cr(100) single-crystal underlayers by ultra-high vacuum molecular beam epitaxy by varying the Sm composition from 10 to 25 at. %. The effect of Sm/Co composition on phase formation is investigated by in-situ reflection high energy electron diffraction. The Sm-Co films with the Sm content ranging from 10 to 17 at. % consist primarily of SmCo_5 phase. As the Sm composition increases beyond 17 at. %, the film involves SmCo_3 and amorphous phases in addition to SmCo_5 phase. The film with the Sm composition of 17 at. % shows strong magnetic anisotropy reflecting the magnetocrystalline anisotropy of SmCo_5 crystal. The magnetic properties are influenced by the kind of Sm-Co phase.
机译:通过在10至25中改变SM组合物,通过超高真空分子束外延在Cr(100)单晶底板上制备SM-CO薄膜。 %。通过原位反射高能电子衍射研究了SM / CO组分对相形成的影响。 SM-CO膜的SM含量为10至17。 %主要由smco_5阶段组成。随着SM成分的增加超过17时。 %,除了SMCO_5相之外,薄膜还涉及SMCO_3和无定形相。具有17℃的SM组成的薄膜。 %显示强磁各向异性,反映了Smco_5晶体的磁镀晶各向异性。磁性受到SM-Co相的影响的影响。

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