Deposition of hetero-epitaxial In(sub 2)O(sub 3) thin films by molecular beam epitaxy

摘要

Highly oriented thin film In(sub 2)O(sub 3) was heteroepitaxially grown on optically polished (100) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using Molecular Beam Epitaxy (MBE). Full-width at half-maximum (FWHM) of X-ray rocking-curve showed 0.08(degree) for In(sub 2)O(sub 3) 200 nm thick layers indicating that excellent uniformity orientation compared with the heteroepitaxially-grown In(sub 2)O(sub 3) epitaxially deposited by the conventional methods such as electron-beam (e-beam) evaporation or sputtering method. The minimum yield ((chi)(sub min)) of the MBE grown in In(sub 2)O(sub 3) film of Rutherford Backscattering Spectrometry (RBS) was also extremely small value 3.1%, implying the very high crystallinity.