A Comparison of 75 MeV Boron and 50 MeV Lithium Ion Irradiation Effects on 200 GHz SiGe HBTs

摘要

The third generation Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were irradiated with 50 MeV Lithium and 75 MeV Boron ions in the dose ranging from 1 Mrad to 100 Mrad. The different electrical characteristics like forward-mode Gummel characteristics, inverse-mode Gummel characteristics, excess base current and current gain were studied before and after ion irradiation. The damage constants for 50 MeV Li~(3+) and 100 MeV B~(5+) ion irradiated SiGe HBTs were calculated using Messenger-Spratt equation.